Direct patterning of nonphotosensitive low-k hydrogen silsesquioxane (HSQ) was achieved using electron beam (EB) lithography. The smallest feature size of 60 nm for damascene lines was demonstrated without using etch-stop layer, photoresist, and dry-etching technologies. The probability of low-k degradation can be thereby avoided during these pattern transfer processes. Material analysis including FTIR and TDS have confirmed the explanation, certainly indicating that relatively high intensity of Si-H bonds and low content of moisture were present in the electron-beam-exposed silicate.
|頁（從 - 到）||4226-4228|
|期刊||Applied Physics Letters|
|出版狀態||Published - 17 11月 2003|