Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

Zhai Jiwei*, M. H. Cheung, Zheng Kui Xu, Xin Li, H. D. Chen, Eugene V. Colla, T. B. Wu

*此作品的通信作者

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3 thin films were deposited via a sol-gel process on LaNiO3-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500-700°C for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 μC/cm2, which is equal to that observed in bulk samples.

原文English
頁(從 - 到)3621-3623
頁數3
期刊Applied Physics Letters
81
發行號19
DOIs
出版狀態Published - 4 十一月 2002

指紋

深入研究「Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O<sub>3</sub> thin films grown by a sol-gel process」主題。共同形成了獨特的指紋。

引用此