Dicing of composite substrate for thin film AlGaInP power LEDs by wet etching

Ray Hua Horng*, Shreekant Sinha, Fu Gow Tarntair, Hsiang An Feng, Chia Wei Tu

*此作品的通信作者

    研究成果: Article同行評審

    摘要

    In this paper, thin film AlGaInP LED chips with a 50 μm thick composite metal substrate (Copper-Invar-Copper; CIC) were obtained by the wet etching process. The pattern of the substrate was done by the backside of the AlGaInP LED/CIC. There was no delamination or cracking phenomenon of the LED epilayer which often occurs by laser or mechanical dicing. The chip area was 1140 μm × 1140 μm and the channel length was 360 μm. The structure of the CIC substrate was a sandwich structure and consisted of Cu as the top and bottom layers, with a thickness of 10 μm, respectively. The middle layer was Invar with a 30% to 70% ratio of Ni and Fe and a total thickness of 30 μm. The chip pattern was successfully obtained by the wet etching process. Concerning the device performance after etching, high-performance LED/CIC chips were obtained. They had a low leakage current, high output power and a low red shift phenomenon as operated at a high injected current. After the development and fabrication of the copper-based composite substrate for N-side up thin-film AlGaInP LED/CIC chips could be diced by wet etching. The superiority of wet etching process for the AlGaInP LED/CIC chips is over that of chips obtained by mechanical or laser dicing.

    原文English
    文章編號10914
    期刊Scientific reports
    11
    發行號1
    DOIs
    出版狀態Published - 十二月 2021

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