Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology

Yao Jen Lee, Fu Ju Hou, Shang Shiun Chuang, Fu Kuo Hsueh, Kuo Hsing Kao, Po Jung Sung, Wei You Yuan, Jay Yi Yao, Yu Chi Lu, Kun Lin Lin, Chien Ting Wu, Hisu Chih Chen, Bo Yuan Chen, Guo Wei Huang, Henry J.H. Chen, Jiun Yun Li, Yi-ming Li, Seiji Samukawa, Tien Sheng Chao, Tseung Yuen TsengWen Fa Wu, Tuo Hung Hou, Wen Kuan Yeh

研究成果: Conference contribution同行評審

16 引文 斯高帕斯(Scopus)

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