TY - GEN
T1 - Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits
AU - Syshchyk, Olga
AU - Cosnier, Thibault
AU - Huang, Zheng Hong
AU - Cingu, Deepthi
AU - Wellekens, Dirk
AU - Vohra, Anurag
AU - Geens, Karen
AU - Vudumula, Pavan
AU - Chatterjee, Urmimala
AU - Decoutere, Stefaan
AU - Wu, Tian Li
AU - Bakeroot, Benoit
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - The device performance of monolithically integrated power Schottky barrier diodes (SBDs) and depletion-mode (D-mode) MIS HEMTs is studied in relation to the thickness of the gate dielectric, the gate-edge termination (GET) layer and AlGaN barrier. Special attention is paid to the turn-on voltage (VTON), ON-resistance (RON), device dispersion, leakage current and breakdown voltage (VBD) of SBDs and D-mode MIS-HEMTs. Based on the current design, SBDs show the lowest dynamic RON for devices with 7.5-9.5 nm AlGaN barrier thickness and 25-35 nm GET thicknesses. The best performance of the D-mode MIS-HEMTs is observed for devices with 5.5 nm AlGaN barrier thickness and 45 nm gate dielectric thickness.
AB - The device performance of monolithically integrated power Schottky barrier diodes (SBDs) and depletion-mode (D-mode) MIS HEMTs is studied in relation to the thickness of the gate dielectric, the gate-edge termination (GET) layer and AlGaN barrier. Special attention is paid to the turn-on voltage (VTON), ON-resistance (RON), device dispersion, leakage current and breakdown voltage (VBD) of SBDs and D-mode MIS-HEMTs. Based on the current design, SBDs show the lowest dynamic RON for devices with 7.5-9.5 nm AlGaN barrier thickness and 25-35 nm GET thicknesses. The best performance of the D-mode MIS-HEMTs is observed for devices with 5.5 nm AlGaN barrier thickness and 45 nm gate dielectric thickness.
KW - GaN
KW - GaN-ICs
KW - Schottky barrier diodes
KW - depletion mode HEMT
KW - enhancement mode HEMT
KW - monolithic integration
UR - http://www.scopus.com/inward/record.url?scp=85142717378&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC55479.2022.9947150
DO - 10.1109/ESSDERC55479.2022.9947150
M3 - Conference contribution
AN - SCOPUS:85142717378
T3 - European Solid-State Device Research Conference
SP - 245
EP - 248
BT - ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference, Proceedings
PB - Editions Frontieres
T2 - 52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022
Y2 - 19 September 2022 through 22 September 2022
ER -