Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si

Chi Wei Chao*, Yew-Chuhg Wu, Gau Ren Hu, Ming Shian Feng

*此作品的通信作者

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

Compared with conventional solid phase crystallized (SPC) thin-film transistors (TFTs), metal-induced laterally crystallized (MILC) TFTs exhibit significantly enhanced performance. Metal films are usually deposited by the physical vapor deposition (PVD) method, which is time-consuming and expensive in terms of equipment cost. In this work, a simpler electroless plating Ni was introduced to replace PVD Ni. It was found that the morphologies and the device characteristics of Ni-induced lateral crystallization TFT were as good as those of PVD Ni-induced lateral crystallization TFT.

原文English
頁(從 - 到)1556-1559
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
發行號4R
DOIs
出版狀態Published - 4月 2003

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