Compared with conventional solid phase crystallized (SPC) thin-film transistors (TFTs), metal-induced laterally crystallized (MILC) TFTs exhibit significantly enhanced performance. Metal films are usually deposited by the physical vapor deposition (PVD) method, which is time-consuming and expensive in terms of equipment cost. In this work, a simpler electroless plating Ni was introduced to replace PVD Ni. It was found that the morphologies and the device characteristics of Ni-induced lateral crystallization TFT were as good as those of PVD Ni-induced lateral crystallization TFT.
|頁（從 - 到）||1556-1559|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 4月 2003|