摘要
Bottom-gate microcrystalline silicon thin film transistors (μc-Si TFTs) have been produced by the radio frequency glow discharge technique using three different plasma treatment on the interface between microcrystalline and SiN layers. Our first microcrystalline silicon TFTs have better stability at high temperature stress.
原文 | English |
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頁面 | 1921-1923 |
頁數 | 3 |
出版狀態 | Published - 12月 2007 |
事件 | 14th International Display Workshops, IDW '07 - Sapporo, 日本 持續時間: 5 12月 2007 → 5 12月 2007 |
Conference
Conference | 14th International Display Workshops, IDW '07 |
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國家/地區 | 日本 |
城市 | Sapporo |
期間 | 5/12/07 → 5/12/07 |