Development of post-annealing method for flexible oxide TFTs application

Chur Shyang Fuh; Po-Tsun Liu; Li Feng Teng; Yang Shun Fan; Chih Hsiang Chang; Yu Ta Wu; Sih Wei Huang; Han Ping D. Shieh

doi:10.1002/j.2168-0159.2013.tb06397.x

Development of post-annealing method for flexible oxide TFTs application

Chur Shyang Fuh, Po-Tsun Liu^*, Li Feng Teng, Yang Shun Fan, Chih Hsiang Chang, Yu Ta Wu, Sih Wei Huang, Han Ping D. Shieh

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光電工程學系

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摘要

Microwave annealing was used instead of furnace annealing to post-treat a nitridated amorphous InGaZnO thin film transistor (a-IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a-IGZO:N TFT with microwave annealing process of 300s is well competitive with its counterpart with furnace annealing at 350°C for 1 hr. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for flexible oxide TFTs application.

原文	English
頁（從 - 到）	1026-1028
頁數	3
期刊	Digest of Technical Papers - SID International Symposium
卷	44
發行號	1
DOIs	https://doi.org/10.1002/j.2168-0159.2013.tb06397.x
出版狀態	Published - 1 1月 2013

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abstract = "Microwave annealing was used instead of furnace annealing to post-treat a nitridated amorphous InGaZnO thin film transistor (a-IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a-IGZO:N TFT with microwave annealing process of 300s is well competitive with its counterpart with furnace annealing at 350°C for 1 hr. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for flexible oxide TFTs application.",

author = "Fuh, {Chur Shyang} and Po-Tsun Liu and Teng, {Li Feng} and Fan, {Yang Shun} and Chang, {Chih Hsiang} and Wu, {Yu Ta} and Huang, {Sih Wei} and Shieh, {Han Ping D.}",

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AU - Fuh, Chur Shyang

AU - Liu, Po-Tsun

AU - Teng, Li Feng

AU - Fan, Yang Shun

AU - Chang, Chih Hsiang

AU - Wu, Yu Ta

AU - Huang, Sih Wei

AU - Shieh, Han Ping D.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Microwave annealing was used instead of furnace annealing to post-treat a nitridated amorphous InGaZnO thin film transistor (a-IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a-IGZO:N TFT with microwave annealing process of 300s is well competitive with its counterpart with furnace annealing at 350°C for 1 hr. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for flexible oxide TFTs application.

AB - Microwave annealing was used instead of furnace annealing to post-treat a nitridated amorphous InGaZnO thin film transistor (a-IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a-IGZO:N TFT with microwave annealing process of 300s is well competitive with its counterpart with furnace annealing at 350°C for 1 hr. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for flexible oxide TFTs application.

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JF - Digest of Technical Papers - SID International Symposium

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Development of post-annealing method for flexible oxide TFTs application

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