Determining the Electron Scattering from Interfacial Coulomb Scatterers in Two-Dimensional Transistors

Yi Te Lee, Yu Ting Huang, Shao Pin Chiu, Ruey Tay Wang, Takashi Taniguchi, Kenji Watanabe, Raman Sankar, Chi Te Liang, Wei Hua Wang*, Sheng Shiuan Yeh*, Juhn Jong Lin

*此作品的通信作者

研究成果: Article同行評審

摘要

Two-dimensional (2D) transistors are promising for potential applications in next-generation semiconductor chips. Owing to the atomically thin thickness of 2D materials, the carrier scattering from interfacial Coulomb scatterers greatly suppresses the carrier mobility and hampers transistor performance. However, a feasible method to quantitatively determine relevant Coulomb scattering parameters from interfacial long-range scatterers is largely lacking. Here, we demonstrate a method to determine the Coulomb scattering strength and the density of Coulomb scattering centers in InSe transistors by comprehensively analyzing the low-frequency noise and transport characteristics. Moreover, the relative contributions from long-range and short-range scattering in the InSe transistors can be distinguished. This method is employed to make InSe transistors consisting of various interfaces a model system, revealing the profound effects of different scattering sources on transport characteristics and low-frequency noise. Quantitatively accessing the scattering parameters of 2D transistors provides valuable insight into engineering the interfaces of a wide spectrum of ultrathin-body transistors for high-performance electronics.

原文English
頁(從 - 到)1066-1073
頁數8
期刊ACS Applied Materials and Interfaces
16
發行號1
DOIs
出版狀態Published - 10 1月 2024

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