Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy

Hao-Chung Kuo*, J. M. Kuo, Y. C. Wang, Chun-Hsiung Lin, Haydn Chen, G. E. Stillman

*此作品的通信作者

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

We report the determination of band offset ratios, using photoluminescence excitation measurements, for GaInP/GaAs and AlInP/GaAs quantum wells grown by gas-source molecular beam epitaxy. To reduce the uncertainty related to the intermixing layer at heterointerfaces, the residual group-V source evacuation time was optimized for abrupt GaInP/GaAs (AlInP/GaAs) interfaces. Based upon thickness and composition values determined by double-crystal x-ray diffraction simulation and cross-sectional transmission electron microscopy, the transition energies of GaInP/GaAs and AlInP/GaAs quantum wells were calculated using a three-band Kane model with varying band-offset ratios. The best fit of measured data to calculated transition energies suggests that the valence-band offset ratio (Γ band discontinuity) was 0.63 ± 0.05 for GaInP/GaAs and 0.54 ± 0.05 for AlInP/GaAs heterostructures. This result showed good agreement with photoluminescence data, indicating that the value is independent of temperature.

原文English
頁(從 - 到)944-948
頁數5
期刊Journal of Electronic Materials
26
發行號8
DOIs
出版狀態Published - 8月 1997

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