Determination of grain boundary barrier height and interface states by a focused laser beam

E. Poon; E. S. Yang; H. L. Evans; Wei Hwang; R. M. Osgood

doi:10.1063/1.93881

Determination of grain boundary barrier height and interface states by a focused laser beam

E. Poon^*, E. S. Yang, H. L. Evans, Wei Hwang, R. M. Osgood

^*此作品的通信作者

國際半導體產業學院

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

An experimental technique has been developed to study the electrical properties of semiconductor grain boundaries (GB's) by a focused laser beam. The laser beam is trained on a GB while the photoconductivity of the sample is measured. This technique allows us to examine a localized region of an individual GB in semiconductors with multiple grains. The measurement of the steady state and transient signals as a function of temperature determines the grain boundary barrier height, trap energy, and capture cross section.

原文	English
頁（從 - 到）	285-287
頁數	3
期刊	Applied Physics Letters
卷	42
發行號	3
DOIs	https://doi.org/10.1063/1.93881
出版狀態	Published - 1 12月 1983

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AU - Osgood, R. M.

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Determination of grain boundary barrier height and interface states by a focused laser beam

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