Determination of grain boundary barrier height and interface states by a focused laser beam

E. Poon*, E. S. Yang, H. L. Evans, Wei Hwang, R. M. Osgood

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

An experimental technique has been developed to study the electrical properties of semiconductor grain boundaries (GB's) by a focused laser beam. The laser beam is trained on a GB while the photoconductivity of the sample is measured. This technique allows us to examine a localized region of an individual GB in semiconductors with multiple grains. The measurement of the steady state and transient signals as a function of temperature determines the grain boundary barrier height, trap energy, and capture cross section.

原文English
頁(從 - 到)285-287
頁數3
期刊Applied Physics Letters
42
發行號3
DOIs
出版狀態Published - 1 12月 1983

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