Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices

Y. F. Lin, Wen-Bin Jian*, Z. Y. Wu, F. R. Chen, J. J. Kai, Juhn-Jong Lin

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperature resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes.

原文English
主出版物標題2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
頁面1112-1115
頁數4
DOIs
出版狀態Published - 三月 2008
事件2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China
持續時間: 24 三月 200827 三月 2008

出版系列

名字2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Conference

Conference2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
國家/地區China
城市Shanghai
期間24/03/0827/03/08

指紋

深入研究「Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices」主題。共同形成了獨特的指紋。

引用此