Detecting stability faults in sub-threshold SRAMs

Chen Wei Lin*, Hao Yu Yang, Chin Yuan Huang, Hung Hsin Chen, Chia-Tso Chao

*此作品的通信作者

    研究成果: Conference contribution同行評審

    摘要

    Detecting stability faults has been a crucial task and a hot research topic for the testing of conventional super-threshold 6T SRAM in the past. When lowering the supply voltage of SRAM to the subthreshold region, the impact of stability faults may significantly change, and hence the test methods developed in the past for detecting stability faults may no longer be effective. In this paper, we first categorize the subthreshold-SRAM designs into different types according to their bit-cell structures. Based on each type, we then analyze the difference of its stability faults compared to the conventional super-threshold 6T SRAM, and discuss how the stability-fault test methods should be modified accordingly. A series of experiments are conducted to validate the effectiveness of each stability-fault test method for different types of subthreshold-SRAM designs.

    原文English
    主出版物標題2011 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2011
    頁面28-33
    頁數6
    DOIs
    出版狀態Published - 1 12月 2011
    事件2011 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2011 - San Jose, CA, United States
    持續時間: 7 11月 201110 11月 2011

    出版系列

    名字IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
    ISSN(列印)1092-3152

    Conference

    Conference2011 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2011
    國家/地區United States
    城市San Jose, CA
    期間7/11/1110/11/11

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