Design Space Exploration of Negative Capacitance Effect in MFIM Structure: A 3D Phase Field Approach

Aayush*, Girish Pahwa, Yogesh Singh Chauhan

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

We present a 3D phase field model of the MFIM structure which helps us gain physical insights into the switching of polarization in the ferroelectric layer. The impact of various physical parameters is also studied. A decrease in the ferroelectric thickness results in better NC effect along with formation of a greater number of domains whereas changing the dielectric thickness causes no change. The decreasing grain angle causes the ferroelectric to switch from multi-domain states to single domain or poled states.

原文English
主出版物標題IEEE Electron Devices Technology and Manufacturing Conference
主出版物子標題Strengthening the Globalization in Semiconductors, EDTM 2024
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350371529
DOIs
出版狀態Published - 2024
事件8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 - Bangalore, 印度
持續時間: 3 3月 20246 3月 2024

出版系列

名字IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

Conference

Conference8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024
國家/地區印度
城市Bangalore
期間3/03/246/03/24

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