TY - GEN
T1 - Design Space Exploration of Negative Capacitance Effect in MFIM Structure
T2 - 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024
AU - Aayush,
AU - Pahwa, Girish
AU - Chauhan, Yogesh Singh
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - We present a 3D phase field model of the MFIM structure which helps us gain physical insights into the switching of polarization in the ferroelectric layer. The impact of various physical parameters is also studied. A decrease in the ferroelectric thickness results in better NC effect along with formation of a greater number of domains whereas changing the dielectric thickness causes no change. The decreasing grain angle causes the ferroelectric to switch from multi-domain states to single domain or poled states.
AB - We present a 3D phase field model of the MFIM structure which helps us gain physical insights into the switching of polarization in the ferroelectric layer. The impact of various physical parameters is also studied. A decrease in the ferroelectric thickness results in better NC effect along with formation of a greater number of domains whereas changing the dielectric thickness causes no change. The decreasing grain angle causes the ferroelectric to switch from multi-domain states to single domain or poled states.
KW - 3D phase field model
KW - ferroelectric
KW - grain angle
KW - multidomain
KW - negative capacitance
UR - http://www.scopus.com/inward/record.url?scp=85193302403&partnerID=8YFLogxK
U2 - 10.1109/EDTM58488.2024.10512066
DO - 10.1109/EDTM58488.2024.10512066
M3 - Conference contribution
AN - SCOPUS:85193302403
T3 - IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
BT - IEEE Electron Devices Technology and Manufacturing Conference
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 3 March 2024 through 6 March 2024
ER -