@inproceedings{541c5a2ffc0643f183fdb1cf8fe1e146,
title = "Design Space Exploration for Scaled FeFET Nonvolatile Memories: High-k Spacer as a Powerful Aid",
abstract = "This work explores the design space for scaled FeFET NVMs using TCAD simulations considering the phase non-uniformity of ferroelectric. Our study suggests that, to meet the requirements including the memory window (MW) and the electric field across interfacial layer (EIL), high-k spacers can be a powerful aid for future scaled FeFETs. High-k spacers improve EIL during write operation, mean MW and the worst MW under a nonuniform phase distribution. More importantly, these improvements increase with the down-scaling of gate length.",
author = "Liu, {You Sheng} and Huang, {Yuan Yu} and Pin Su",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; null ; Conference date: 06-03-2022 Through 09-03-2022",
year = "2022",
doi = "10.1109/EDTM53872.2022.9798076",
language = "English",
series = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "70--72",
booktitle = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",
address = "United States",
}