Design, Process, and Characterization of Complementary Metal-Oxide-Semiconductor Circuits and Six-Transistor Static Random-Access Memory in 4H-SiC
Chia Lung Hung*, Bing Yue Tsui, Te Kai Tsai, Li Jung Lin, Yu Xin Wen
*此作品的通信作者
研究成果: Article › 同行評審
Chia Lung Hung*, Bing Yue Tsui, Te Kai Tsai, Li Jung Lin, Yu Xin Wen
研究成果: Article › 同行評審