Design of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetection

Ming Hao Kuo, Wei Ting Lai, Sheng Wei Lee, Yen Chun Chen, Chia Wei Chang, Wen-Hao Chang, Tzu Min Hsu, Pei-Wen Li*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

We demonstrate an effective approach to grow high-quality thin film (>1 μm) of multifold Ge/Si/Ge composite quantum dots (CQDs) stacked heterostructures for near infrared photodetection and optical interconnect applications. An otherwise random, self-assembly of variable-fold Ge/Si CQDs has been grown on Si through the insertion of Si spacer layers to produce micron-scale-thick, stacked Ge/Si CQD layers with desired QD morphology and composition distribution. The high crystalline quality of these multifold Ge CQD heterostructures is evidenced by low dark current density of 3.68 pA/μm2, superior photoresponsivity of 267 and 220 mA/W under 850 and 980 nm illumination, respectively, and very fast temporal response time of 0.24 ns measured on the Ge/Si CQD photodetectors.

原文English
頁(從 - 到)2401-2404
頁數4
期刊Optics Letters
40
發行號10
DOIs
出版狀態Published - 15 5月 2015

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