Design of integrated gate driver with threshold voltage drop cancellation in amorphous silicon technology for TFT-LCD application

Li Wei Chu*, Po-Tsun Liu, Ming-Dou Ker

*此作品的通信作者

研究成果: Article同行評審

41 引文 斯高帕斯(Scopus)

摘要

A new integrated gate driver has been successfully designed and fabricated by amorphous silicon (a-Si) technology for a 3.8-in WVGA (800×RGB× 480) TFT-LCD panel. With the proposed threshold voltage drop-cancellation technique, the output rise time of the proposed integrated gate driver can be substantially decreased by 24.6% for high-resolution display application. Moreover, the proposed noise reduction path between the adjacent gate drivers can reduce the layout area for slim bezel display. The transmittance brightness and contrast ratio of the demonstrated 3.8-inch panel show almost no degradation after the 500 h operation under 70 °C and -20 °C conditions.

原文English
文章編號6052150
頁(從 - 到)657-664
頁數8
期刊IEEE/OSA Journal of Display Technology
7
發行號12
DOIs
出版狀態Published - 31 10月 2011

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