Design of high-voltage-tolerant stimulus driver with adaptive loading consideration to suppress epileptic seizure in a 0.18-μm CMOS process

Chun Yu Lin*, Yi Ju Li, Ming-Dou Ker

*此作品的通信作者

    研究成果: Article同行評審

    6 引文 斯高帕斯(Scopus)

    摘要

    A novel design of high-voltage-tolerant stimulus driver for epileptic seizure suppression with low power design and adaptive loading consideration is proposed in this work. The proposed design can deliver the required stimulus current within a specific range of loading impedance. Besides, this design in 0.18-μm low-voltage CMOS process can be operated with high supply voltage (VCC) of 5-10 V without using the high-voltage transistors, and the process steps of high-voltage transistors can be reduced. The proposed design can be further integrated for an electronic epilepsy prosthetic system-on-chip.

    原文English
    頁(從 - 到)219-226
    頁數8
    期刊Analog Integrated Circuits and Signal Processing
    79
    發行號2
    DOIs
    出版狀態Published - 1 1月 2014

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