@inproceedings{39a8a78fddc346ad868337371b0af747,
title = "Design of High-RA STT-MRAM for Future Energy-Efficient In-Memory Computing",
abstract = "In contrast to the low-RA STT-MRAM for memory applications, high-RA (> 500 Ω-μ m2) STT-MRAM with high cell resistance (1 M Ω) is required to support energy-efficient in-memory computing beyond 10 POPS/W. Scaling the coercive magnetic field and cell dimension and increasing the MgO thickness are found critical for enlarging RA and write margin.",
author = "Hong, {Ming Chun} and Su, {Yi Hui} and Chen, {Guan Long} and Hsin, {Yu Chen} and Chang, {Yao Jen} and Chen, {Kuan Ming} and Yang, {Shan Yi} and Wang, {I. Jung} and Rahaman, {Sk Ziaur} and Lee, {Hsin Han} and Wei, {Jeng Hua} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Chang, {Shih Chieh} and Hou, {Tuo Hung}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 ; Conference date: 17-04-2023 Through 20-04-2023",
year = "2023",
doi = "10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134453",
language = "English",
series = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",
address = "美國",
}