Design of High-Power Red VCSEL on a Removable Substrate

Chun Yen Peng, Wei Ta Huang, Zhi Kuang Lu, Shih Chen Chen, Hao Chung Kuo*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this work, the architecture of a high-power InAlGaP/InGaP vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 680 nm was studied. The design of quantum well, including the well thickness, indium composition, and barrier aluminum composition targeting the emission wavelength, was elaborately optimized. Moreover, the influences of leakage current, temperature dependence of optical gain, and resonance mode gain to threshold current under different barrier aluminum compositions were investigated. Lastly, the temperature characteristics of InAlGaP/InGaP VCSEL with substrate removal have also been calculated with 24% and 40.6% improvement in thermal resistance and operating current range, respectively. It holds great promise for high-power red VCSEL application.

原文English
文章編號763
期刊Photonics
9
發行號10
DOIs
出版狀態Published - 10月 2022

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