摘要
A systematic investigation on a series of Nd:YVO4 crystals with different dopant concentrations is conducted to scale the diode-end-pumped laser performance to higher powers. The analysis reveals that lowering the dopant concentration linearly extends the fracture-limited pump power and the thermal shock parameter plays an important role in the estimation of the fracture-limited pump power. The thermal shock parameter in Nd:YVO4 crystals has been determined from the laser experiments. Based on the analysis, we demonstrate a compact and efficient diode-end-pumped TEMoo laser with output power of 25.2-W for 52-W of incident pump power by use of a single YVO4 crystal with a Nd concentration of 0.3 at.%. In Q-switched operation 21-W of average power at a pulse repetition rate of 100 kHz and approximately 1.1-m pulse energy at a pulse repetition rate of 10 kHz were produced.
原文 | English |
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頁(從 - 到) | 116-121 |
頁數 | 6 |
期刊 | Proceedings of SPIE - The International Society for Optical Engineering |
卷 | 3929 |
DOIs | |
出版狀態 | Published - 22 1月 2000 |
事件 | Solid State Lasers IX - San Jose, CA, USA 持續時間: 25 1月 2000 → 26 1月 2000 |