TY - JOUR
T1 - Design of 2.5V/5V mixed-voltage CMOS I/O buffer with only thin oxide device and dynamic N-well bias circuit
AU - Ker, Ming-Dou
AU - Tsai, Chia Sheng
PY - 2003/7/14
Y1 - 2003/7/14
N2 - This paper presents a 2.5V/5V mixed-voltage CMOS I/O buffer that does not need a CMOS technology with a dual-oxide option and complex bias circuits. The proposed mixed-voltage I/O buffer with simpler circuit structure can overcome the problems of leakage current and gate-oxide reliability, which occurring in the conventional CMOS I/O buffer. In this work, the new proposed design has been realized in a 0.25-μm CMOS process, but it can be easily scaled toward 0.18-μm or 0.15-μm processes to serve a 1.8V/3.3V mixed-voltage I/O interface.
AB - This paper presents a 2.5V/5V mixed-voltage CMOS I/O buffer that does not need a CMOS technology with a dual-oxide option and complex bias circuits. The proposed mixed-voltage I/O buffer with simpler circuit structure can overcome the problems of leakage current and gate-oxide reliability, which occurring in the conventional CMOS I/O buffer. In this work, the new proposed design has been realized in a 0.25-μm CMOS process, but it can be easily scaled toward 0.18-μm or 0.15-μm processes to serve a 1.8V/3.3V mixed-voltage I/O interface.
UR - http://www.scopus.com/inward/record.url?scp=0038420756&partnerID=8YFLogxK
U2 - 10.1109/ISCAS.2003.1206197
DO - 10.1109/ISCAS.2003.1206197
M3 - Conference article
AN - SCOPUS:0038420756
SN - 0271-4310
VL - 5
JO - Proceedings - IEEE International Symposium on Circuits and Systems
JF - Proceedings - IEEE International Symposium on Circuits and Systems
T2 - Proceedings of the 2003 IEEE International Symposium on Circuits and Systems
Y2 - 25 May 2003 through 28 May 2003
ER -