Design Navigation and Exploration of Complementary Ferroelectric FET (CFeFET) for Next-Generation CFET-based Nonvolatile SRAM and Logic-in-Memory Applications

This paper investigates the potential of complementary ferroelectric FETs (CFeFETs) to enable nonvolatile SRAM (nv-SRAM) and logic-in-memory applications. CFeFET consisting of stacking n-type FeFET and p-type FeFET, and the Ron/Roff ratio of the complementary paths in a CFeFET is larger than 106. For enhancing the feasibility of CFeFET, 4T CFeFET nv-SRAM with separated R/W ports is proposed and evaluated. Moreover, we further demonstrated several logic-in-memory applications using CFeFETs, including content addressable memory (CAM), lossless digital computation-in-memory circuits (D-CIM) and hyperdimensional computing (HDC). The simulation results of these circuits show CFeFETs achieving superior power-performance-area (PPA) compared to current approaches. The energy efficiency of D-CIM and HDC can be achieved above 1000 TOPS/W.