Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s

Chih Chiang Shen; Tsung Chi Hsu; Yen Wei Yeh; Chieh Yu Kang; Yun Ting Lu; Hon Way Lin; Hsien Yao Tseng; Yu Tzu Chen; Cheng Yuan Chen; Chien-Chung Lin; Chao Hsin Wu; Po-Tsung Lee; Yang Sheng; Ching Hsueh Chiu; Hao-Chung Kuo

doi:10.1186/s11671-019-3107-7

Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s

Chih Chiang Shen, Tsung Chi Hsu, Yen Wei Yeh, Chieh Yu Kang, Yun Ting Lu, Hon Way Lin, Hsien Yao Tseng, Yu Tzu Chen, Cheng Yuan Chen, Chien-Chung Lin, Chao Hsin Wu, Po-Tsung Lee, Yang Sheng, Ching Hsueh Chiu^*, Hao-Chung Kuo

^*此作品的通信作者

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-μm oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 °C and 85 °C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 °C and 85 °C due to the reduction of cavity length from 3λ/2 to λ/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 °C.

原文	English
文章編號	276
期刊	Nanoscale Research Letters
卷	14
發行號	1
DOIs	https://doi.org/10.1186/s11671-019-3107-7
出版狀態	Published - 14 8月 2019

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10.1186/s11671-019-3107-7

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@article{5d19094307d54ac5a5237e56e90ed684,

title = "Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s",

abstract = "We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-μm oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 °C and 85 °C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 °C and 85 °C due to the reduction of cavity length from 3λ/2 to λ/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 °C.",

keywords = "50 Gb/s, Cavity length, High-speed VCSEL, Oxide aperture, PICS3D",

author = "Shen, {Chih Chiang} and Hsu, {Tsung Chi} and Yeh, {Yen Wei} and Kang, {Chieh Yu} and Lu, {Yun Ting} and Lin, {Hon Way} and Tseng, {Hsien Yao} and Chen, {Yu Tzu} and Chen, {Cheng Yuan} and Chien-Chung Lin and Wu, {Chao Hsin} and Po-Tsung Lee and Yang Sheng and Chiu, {Ching Hsueh} and Hao-Chung Kuo",

year = "2019",

month = aug,

day = "14",

doi = "10.1186/s11671-019-3107-7",

language = "English",

volume = "14",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

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TY - JOUR

T1 - Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s

AU - Shen, Chih Chiang

AU - Hsu, Tsung Chi

AU - Yeh, Yen Wei

AU - Kang, Chieh Yu

AU - Lu, Yun Ting

AU - Lin, Hon Way

AU - Tseng, Hsien Yao

AU - Chen, Yu Tzu

AU - Chen, Cheng Yuan

AU - Lin, Chien-Chung

AU - Wu, Chao Hsin

AU - Lee, Po-Tsung

AU - Sheng, Yang

AU - Chiu, Ching Hsueh

AU - Kuo, Hao-Chung

PY - 2019/8/14

Y1 - 2019/8/14

N2 - We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-μm oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 °C and 85 °C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 °C and 85 °C due to the reduction of cavity length from 3λ/2 to λ/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 °C.

AB - We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-μm oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 °C and 85 °C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 °C and 85 °C due to the reduction of cavity length from 3λ/2 to λ/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 °C.

KW - 50 Gb/s

KW - Cavity length

KW - High-speed VCSEL

KW - Oxide aperture

KW - PICS3D

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U2 - 10.1186/s11671-019-3107-7

DO - 10.1186/s11671-019-3107-7

M3 - Article

AN - SCOPUS:85070690097

SN - 1931-7573

VL - 14

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 276

ER -

Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s

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