Design consideration of semiconductor optical amplifier linearity

Jyehong Chen*, X. Zhao, F. S. Choa

*此作品的通信作者

研究成果: Conference article同行評審

6 引文 斯高帕斯(Scopus)

摘要

The fundamental design factors affecting semiconductor optical amplifier (SOA) linearity and a way to reduce the nonlinearity without sacrificing the gain are investigated. The first factor, a small confinement factor, affects the SOA linearity by diluting the optical intensity and allowing the gain compression to happen at higher output power. These are done by using diluted waveguide and shift the gain medium to the side instead of middle of the waveguide. The device length is the second factor. A long amplifier amplifies lower power signals more and high power signals less, while the shorter amplifier has better gain linearity. The third factor is the carrier injection profile that prevent carrier depletion to keep the gain linearity.

原文English
頁(從 - 到)329-330
頁數2
期刊Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
1
DOIs
出版狀態Published - 1997
事件Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA
持續時間: 10 11月 199713 11月 1997

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