@inproceedings{1ab547faf8314ad88b83b0b48a0a302d,
title = "Design and simulation of Si/SiC quantum dot superlattice solar cells with Al2O3 passivation layer",
abstract = "By simultaneously considering the enhancement of quantum confinement on the effective bandgap and minimum transition energy, the silicon (Si)/ silicon carbide (SiC) quantum dot superlattice (SiC-QDSL) with aluminum oxide (Al2O3-QDSL) passivation layer shows the high short-circuit current (Jsc) of 4.77 mA/cm2 in theoretical, which agrees with the Jsc of 4.75 mA/cm2 obtained in the experiment under an AM1.5 and one sun illumination. Moreover, the reduction of efficiency in an ultra-dense QD configuration can be ameliorated by exploiting the Al2O3 passivation layer. As the result, a high conversion efficiency of 16.3% is optimized by using the QD geometry from experiment and an inter-dot spacing of 0.3 nm.",
keywords = "Conversion efficiency, Density of States, Layer distance, Minibands, Multilayer, Si/SiC Quantum dot, Solar cell, Superlattice",
author = "Tsai, {Yi Chia} and Ming-Yi Lee and Yi-Ming Li and Seiji Samukawa",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 17th IEEE International Conference on Nanotechnology, NANO 2017 ; Conference date: 25-07-2017 Through 28-07-2017",
year = "2017",
month = nov,
day = "21",
doi = "10.1109/NANO.2017.8117369",
language = "English",
series = "2017 IEEE 17th International Conference on Nanotechnology, NANO 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "341--344",
booktitle = "2017 IEEE 17th International Conference on Nanotechnology, NANO 2017",
address = "United States",
}