Design and implementation of multi-octave low-noise power amplifier (LNPA) using HIFET configuration

Che Yang Chiang*, Heng-Tung Hsu

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

This paper reports an low-noise-power amplifier (LNPA) MMIC using HIFET (High-Voltage, High-Impedance FET) configuration with very broadband performance in terms of noise figure, output power and linearity. Based on 0.15μm pHEMT technology, this MMIC delivers a gain of 12.5 ± 1dB, 1.5 ∼ 2.5 dB noise figure (NF), good impedance match with S11/S22 less than -10 dB, and over 15 dBm of output P1dB covering the entire 2 GHz to 13 GHz with 25% peak efficiency, at a bias voltage of 4 V. The proposed LNPA also demonstrates excellent thermal stability. The measured thermal-sensitivity coefficient for the small-signal gain is as low as 0.0144 dB/°C with respect to the temperature variation from -30°C to 150°C. The overall chip area is as small as 0.93 mm2 excluding test pads.

原文English
主出版物標題2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
頁面956-958
頁數3
DOIs
出版狀態Published - 1 十二月 2012
事件2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan
持續時間: 4 十二月 20127 十二月 2012

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2012 Asia-Pacific Microwave Conference, APMC 2012
國家/地區Taiwan
城市Kaohsiung
期間4/12/127/12/12

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