Design and implementation of dynamic Word-Line pulse write margin monitor for SRAM

Shao Cheng Wang*, Geng Cing Lin, Yi Wei Lin, Ming Chien Tsai, Yi Wei Chiu, Shyh-Jye Jou, Ching Te Chuang, Nan Chun Lien, Wei Chiang Shih, Kuen Di Lee, Jyun Kai Chu

*此作品的通信作者

    研究成果: Conference contribution同行評審

    3 引文 斯高帕斯(Scopus)

    摘要

    We present an all-digital monitor structure to measure the Write Margin (WM) with dynamic Word-Line (WL) pulse for standard CMOS 6T SRAM. Ring oscillator and frequency divider based structures are used to generate wide range WL pulses (150ps ∼ 32ns) with resolution of 50ps. The bit-line voltage is then successively stepped down for dynamic Write Margin characterization under given word-line pulse width. An improved Skitter based structure is employed to measure the WL pulse width with resolution of 10 ∼ 20ps. Implementation of a 256Kb test chip in UMC 55nm Standard Performance (SP) CMOS technology is described.

    原文English
    主出版物標題2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012
    頁面116-119
    頁數4
    DOIs
    出版狀態Published - 1 12月 2012
    事件2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012 - Kaohsiung, 台灣
    持續時間: 2 12月 20125 12月 2012

    出版系列

    名字IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS

    Conference

    Conference2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012
    國家/地區台灣
    城市Kaohsiung
    期間2/12/125/12/12

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