Design and fabrication of the reliable GaN based vertical-cavity surface-emitting laser via tunnel junction

Chih Chiang Shen, Yun Ting Lu, Yen Wei Yeh, Cheng Yuan Chen, Yu Tzu Chen, Chin Wei Sher, Po-Tsung Lee, Ya Hsuan Shih, Tien-Chang Lu, Tingzhu Wu*, Ching Hsueh Chiu, Hao-Chung Kuo

*此作品的通信作者

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (J th ) from 12 to 8.5 kA/cm 2 , and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 ◦C) and high operation current (1.5 × J th ) test for over 500 h.

原文English
文章編號187
頁(從 - 到)1-7
頁數7
期刊Crystals
9
發行號4
DOIs
出版狀態Published - 1 4月 2019

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