Design and Characterization of the Junction Isolation Structure for Monolithic Integration of Planar CMOS and Vertical Power MOSFET on 4H-SiC up to 300 °C

Bing Yue Tsui*, Te Kai Tsai, Chia Lung Hung, Yu Xin Wen

*此作品的通信作者

研究成果: Conference contribution同行評審

4 引文 斯高帕斯(Scopus)

指紋

深入研究「Design and Characterization of the Junction Isolation Structure for Monolithic Integration of Planar CMOS and Vertical Power MOSFET on 4H-SiC up to 300 °C」主題。共同形成了獨特的指紋。

Keyphrases

Engineering

Material Science