Design and Analysis of High-Gain and Compact Single-Input Differential-Output Low Noise Amplifier for 5G Applications

Hao Hsuan Chen, Wei Chung Cheng, Cheng Hung Hsieh, Zuo Min Tsai

研究成果: Article同行評審

摘要

This letter describes the design, analysis, and testing of a 28-GHz single-input differential-output (SIDO) low-noise amplifier (LNA) with a noise figure of 2.5 dB, compact size (0.25 mm²), and high gain (22.3 dB). The proposed LNA was fabricated using the Taiwan Semiconductor Manufacturing Company (TSMC) 65-nm CMOS process. This amplifier contains a two-stage common-source (CS) buffer amplifier for a low-noise design and combines CS and common-gate transistors for converting single-ended signal into differential signal. A novel method of common-mode rejection ratio optimization is used to determine the optimal phase compensation transmission line and transistor size to reduce gain and phase imbalances simultaneously. The gain and phase imbalances were 0.042 dB and 2.6° at 28 GHz, respectively. Compared with published LNAs, this SIDO LNA achieved the high figure of merits (FoMs) of 7.17 and 2.27, respectively. Therefore, this LNA can be used for 5G NR band of n257 (26.5-29.5 GHz), n258 (24.25-27.5 GHz), and n261 (27.5-28.35 GHz).

原文English
期刊IEEE Microwave and Wireless Components Letters
DOIs
出版狀態Accepted/In press - 2022

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