Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-μm GaAs pHEMT Process

Yun Che Hsieh; Guan Jhih Lin; Zuo Min Tsai; Tzu Hung Chen

doi:10.1109/LMWT.2024.3368290

Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-μm GaAs pHEMT Process

Yun Che Hsieh, Guan Jhih Lin^*, Zuo Min Tsai^*, Tzu Hung Chen

^*此作品的通信作者

電信工程研究所

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

This letter presents the design and measured performance of a full Ka-band stacked-FET power amplifier (PA) fabricated using the 0.15-m Gallium arsenide (GaAs) pHEMT process. A stacked FET configuration is adopted in the power stage of the PA to achieve wideband power performance and linearity improvement at high input power. Measurements indicate that the proposed PA has a small-signal gain of 17 dB, a saturated output power (PSAT ) of 24.5 dBm, an output 1-dB compression point (OP1dB) of 24.3 dBm, and a power-added efficiency (PAE) of 33.3%. The bandwidth of the PA ranges from 26 to 40 GHz, and thus covers the entire Ka-band. The proposed PA exhibits high performance, which makes it suitable for the applications of 5G wireless systems.

原文	English
頁（從 - 到）	427-430
頁數	4
期刊	IEEE Microwave and Wireless Technology Letters
卷	34
發行號	4
DOIs	https://doi.org/10.1109/LMWT.2024.3368290
出版狀態	Published - 1 4月 2024

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10.1109/LMWT.2024.3368290

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title = "Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-μm GaAs pHEMT Process",

abstract = "This letter presents the design and measured performance of a full Ka-band stacked-FET power amplifier (PA) fabricated using the 0.15-m Gallium arsenide (GaAs) pHEMT process. A stacked FET configuration is adopted in the power stage of the PA to achieve wideband power performance and linearity improvement at high input power. Measurements indicate that the proposed PA has a small-signal gain of 17 dB, a saturated output power (PSAT ) of 24.5 dBm, an output 1-dB compression point (OP1dB) of 24.3 dBm, and a power-added efficiency (PAE) of 33.3%. The bandwidth of the PA ranges from 26 to 40 GHz, and thus covers the entire Ka-band. The proposed PA exhibits high performance, which makes it suitable for the applications of 5G wireless systems.",

keywords = "Fifth generation (5G), Ka-band, gallium arsenide (GaAs), linearity, millimeter wave (MMW), pHEMT, power amplifier (PA), stacked-FET, wideband",

author = "Hsieh, {Yun Che} and Lin, {Guan Jhih} and Tsai, {Zuo Min} and Chen, {Tzu Hung}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.",

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T1 - Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-μm GaAs pHEMT Process

AU - Hsieh, Yun Che

AU - Lin, Guan Jhih

AU - Tsai, Zuo Min

AU - Chen, Tzu Hung

PY - 2024/4/1

Y1 - 2024/4/1

N2 - This letter presents the design and measured performance of a full Ka-band stacked-FET power amplifier (PA) fabricated using the 0.15-m Gallium arsenide (GaAs) pHEMT process. A stacked FET configuration is adopted in the power stage of the PA to achieve wideband power performance and linearity improvement at high input power. Measurements indicate that the proposed PA has a small-signal gain of 17 dB, a saturated output power (PSAT ) of 24.5 dBm, an output 1-dB compression point (OP1dB) of 24.3 dBm, and a power-added efficiency (PAE) of 33.3%. The bandwidth of the PA ranges from 26 to 40 GHz, and thus covers the entire Ka-band. The proposed PA exhibits high performance, which makes it suitable for the applications of 5G wireless systems.

AB - This letter presents the design and measured performance of a full Ka-band stacked-FET power amplifier (PA) fabricated using the 0.15-m Gallium arsenide (GaAs) pHEMT process. A stacked FET configuration is adopted in the power stage of the PA to achieve wideband power performance and linearity improvement at high input power. Measurements indicate that the proposed PA has a small-signal gain of 17 dB, a saturated output power (PSAT ) of 24.5 dBm, an output 1-dB compression point (OP1dB) of 24.3 dBm, and a power-added efficiency (PAE) of 33.3%. The bandwidth of the PA ranges from 26 to 40 GHz, and thus covers the entire Ka-band. The proposed PA exhibits high performance, which makes it suitable for the applications of 5G wireless systems.

KW - Fifth generation (5G)

KW - Ka-band

KW - gallium arsenide (GaAs)

KW - linearity

KW - millimeter wave (MMW)

KW - pHEMT

KW - power amplifier (PA)

KW - stacked-FET

KW - wideband

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U2 - 10.1109/LMWT.2024.3368290

DO - 10.1109/LMWT.2024.3368290

M3 - Article

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SN - 2771-957X

VL - 34

SP - 427

EP - 430

JO - IEEE Microwave and Wireless Technology Letters

JF - IEEE Microwave and Wireless Technology Letters

IS - 4

ER -

Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-μm GaAs pHEMT Process

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