Depth-resolved confocal micro-Raman spectroscopy for characterizing GaN-based light emitting diode structures

Keyphrases

• Active Layer 100%
• Diode Structures 100%
• GaN-based Light-emitting Diodes 100%
• Confocal Raman Microscopy 100%
• Depth-resolved 100%
• Nitrides 50%
• Sapphire Substrate 50%
• Electronic Properties 50%
• Structural Properties 50%
• Raman Shift 50%
• Compression Effect 50%
• Phonons 50%
• Capping Layer 50%
• GaN-based LED 50%
• Index of Refraction 50%
• Raman Peak 50%
• Strain Distribution 50%
• LED Structure 50%
• Axial Profile 50%
• Structural Dimension 50%
• Thick Active Layers 50%
• Depth Compression 50%
• Operando Investigation 50%
• Strain Variation 50%
• Phonon Structure 50%
• In Operando 50%

Engineering

• Light-Emitting Diode 100%
• Active Layer 100%
• Sapphire Substrate 33%
• Nitride 33%
• Structural Property 33%
• Capping Layer 33%
• Refraction Index 33%
• Peak Intensity 33%
• Raman Peak 33%
• Phonon Structure 33%

Immunology and Microbiology

• Micro-Raman Spectroscopy 100%
• Phonon 100%
• Refraction Index 50%
• Capping Phenomenon 50%
• Optics 50%