Dependences of Structural Parameters on the Characteristics of Poly-Si Thin-Film Transistors after Plasma Passivation

Cheng Ming Yu*, Tiao Yuan Huang, Tan Fu Lei, Horng-Chih Lin

*此作品的通信作者

研究成果: Conference article同行評審

摘要

The effects of NH3 and H2 plasma passivation on the characteristics of poly-Si thin-film transistors with source/drain extensions induced by a bottom sub-gate were studied. Our results show that significant improvements in device performance can be obtained by both passivation methods. Moreover, NH3-plasma-treatment appears to be more effective in reducing the off-state leakage, subthreshold swing, compared to H2 plasma passivation. NH3 plasma treatment is also found to be more effective in reducing the anomalous subthrehold hump phenomenon observed in non-plasma-treated short-channel devices. Detailed analysis suggests that all these improvements can be explained by the more effective passivation of the traps distributed in both the front and back sides of the channel by NH 3 plasma treatment.

原文English
頁(從 - 到)181-186
頁數6
期刊Materials Research Society Symposium - Proceedings
762
DOIs
出版狀態Published - 1 12月 2003
事件Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States
持續時間: 22 4月 200325 4月 2003

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