Dependence of the structure and orientation of VSS grown Si nanowires on an epitaxy process

Yi Ting Chiang, Yi Chou, Chang Hsun Huang, Wei Ting Lin, Yi-Chia Chou*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

We investigated the vapor-solid-solid growth of Si nanowires from Ni silicides on Si(111), Si(110), and GaN substrates. The morphology and structures of Si on these substrates are distinct, and are dependent on substrate lattices and an epitaxy process during growth. The sidewall facets and epitaxy of silicides and Si were discussed. In addition, Si grown on GaN nanowires was investigated which led to the formation of branched nanowire structures. The Si nanowires/nanodots lie on the surface of GaN nanowires to maintain lower system energy. We manipulated the whole process in a UHV and studied the crystal growth of Si on different lattice substrates. Meanwhile, the process which occurred in a non-UHV led to less regularity on the NiSi2 crystal facets and interface epitaxy between NiSi2 and Si nanowires.

原文English
頁(從 - 到)4298-4304
頁數7
期刊CrystEngComm
21
發行號29
DOIs
出版狀態Published - 1 1月 2019

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