Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

Jethro Oroceo Gallardo, Sachidananda Dash, Thanh Nga Tran, Zhen Hong Huang, Shun Wei Tang, Dirk Wellekens, Benoit Bakeroot, Olga Syshchyk, Brice De Jaeger, Stefaan Decoutere, Tian Li Wu*

*此作品的通信作者

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摘要

Development of integration of different components with GaN-based technologies has been gaining traction in recently. Among these, diodes play important roles in GaN power ICs. For this work, a fabrication approach for integrating a Schottky barrier diode (SBD) with a p-GaN enhancement (E-mode) for 200 V switching application is demonstrated. The integrated SBD with 30-mm width shows a low forward voltage (Vf) with more than 10A and 6A at Vac = 3 V at 25 °C and 150 °C, respectively. Additionally, the devices show a stable ON-resistance (RON) (<20% increase) up to 200 V at 25 °C/150 °C under pulsed IV characterization and OFF-state stress, pointing out the robust stability for integrated GET-SBDs on a power p-GaN HEMT platform.

原文English
文章編號114568
期刊Microelectronics Reliability
134
DOIs
出版狀態Published - 7月 2022

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