Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) Substrates

Bao Yuan Wang, Chin Ya Su, Tian Li Wu*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

GaN HEMTs are promising for the RF applications due to the high electron mobility. Recently, GaN-on-Si technologies attracts lots of attentions. Furthermore, the SOI substrate is also promising for the RF applications due to the reduction of the substrate loss. However, the typical GaN-on-SOI (silicon-on-insulator) requires the epitaxy on top of the SOI substrates.

原文English
主出版物標題2022 Device Research Conference, DRC 2022
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665498838
DOIs
出版狀態Published - 2022
事件2022 Device Research Conference, DRC 2022 - Columbus, United States
持續時間: 26 6月 202229 6月 2022

出版系列

名字Device Research Conference - Conference Digest, DRC
2022-June
ISSN(列印)1548-3770

Conference

Conference2022 Device Research Conference, DRC 2022
國家/地區United States
城市Columbus
期間26/06/2229/06/22

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