TY - GEN
T1 - Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) Substrates
AU - Wang, Bao Yuan
AU - Su, Chin Ya
AU - Wu, Tian Li
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - GaN HEMTs are promising for the RF applications due to the high electron mobility. Recently, GaN-on-Si technologies attracts lots of attentions. Furthermore, the SOI substrate is also promising for the RF applications due to the reduction of the substrate loss. However, the typical GaN-on-SOI (silicon-on-insulator) requires the epitaxy on top of the SOI substrates.
AB - GaN HEMTs are promising for the RF applications due to the high electron mobility. Recently, GaN-on-Si technologies attracts lots of attentions. Furthermore, the SOI substrate is also promising for the RF applications due to the reduction of the substrate loss. However, the typical GaN-on-SOI (silicon-on-insulator) requires the epitaxy on top of the SOI substrates.
UR - http://www.scopus.com/inward/record.url?scp=85137668906&partnerID=8YFLogxK
U2 - 10.1109/DRC55272.2022.9855794
DO - 10.1109/DRC55272.2022.9855794
M3 - Conference contribution
AN - SCOPUS:85137668906
T3 - Device Research Conference - Conference Digest, DRC
BT - 2022 Device Research Conference, DRC 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 Device Research Conference, DRC 2022
Y2 - 26 June 2022 through 29 June 2022
ER -