Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors with an Indium-Tin-Oxide Gate Electrode

Chih Yao Chang, Chien Sheng Wang, Ching Yao Wang, Yao Luen Shen, Tian Li Wu, Wei Hung Kuo, Suh Fang Lin, Chih Fang Huang*

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this study, p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) with indium-tin-oxide (ITO) gate electrodes are demonstrated. The DC measurements for the devices show a drain current ( text{I}-{mathrm{ D}} ) of 438 mA/mm at a text{V}-{mathrm{ D}} and a text{V}-{mathrm{ G}} of 10 and 8 V, respectively. A maximum {g} -{mathrm{ m}} of 92.1 mS/mm and a specific ON-resistance ( text{R}-{mathrm{ on}}cdot {mathrm{ A}} ) of 1.86 text{m}Omega cm2 are obtained. Furthermore, the robustness of the ITO gate electrode atop the p-GaN layer under the forward gate bias is studied, indicating stable text{I}-{mathrm{ G}}-{mathrm{ V}}-{mathrm{ G}} and text{I}-{mathrm{ D}}-{mathrm{ V}}-{mathrm{ G}} characteristics for a gate voltage of less than 11 V, which is higher than the compared device with Ni/Au Schottky gate contact. Therefore, ITO gate electrodes, which are compatible with the Light-emitting diode (LED) process, are a promising alternative for p-GaN HEMT technologies.

原文English
文章編號9223718
頁(從 - 到)2-5
頁數4
期刊IEEE Journal of the Electron Devices Society
9
DOIs
出版狀態Published - 1月 2021

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