Demonstration of Large Polarization in Si-doped HfO2Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention

Jing Hua Hsuen; Maximillian Lederer; Lars Kerkhofs; Yannick Raffel; Luca Pirro; Talha Chohan; Konrad Seidel; Thomas Kampfe; Sourav De; Tian Li Wu

doi:10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504

Demonstration of Large Polarization in Si-doped HfO₂Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention

Jing Hua Hsuen, Maximillian Lederer^*, Lars Kerkhofs, Yannick Raffel, Luca Pirro, Talha Chohan, Konrad Seidel, Thomas Kampfe, Sourav De, Tian Li Wu^*

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

4 引文斯高帕斯（Scopus）

摘要

This paper reports that large polarization (2 Pr 35.3 μ C cm2) can be demonstrated in Si-doped Hf02 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with proper annealing temperature. In addition, wake-up free characteristic as well as good retention for up to 104 seconds is observed for the devices used in the present study. It is also found that devices with different annealing temperatures lead to distinct leakage behavior, which adversely affected the cycle-to-breakdown reliability.

原文	English
主出版物標題	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9798350334166
DOIs	https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504
出版狀態	Published - 2023
事件	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, 台灣持續時間: 17 4月 2023 → 20 4月 2023

出版系列

名字	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
國家/地區	台灣
城市	Hsinchu
期間	17/04/23 → 20/04/23

存取文件

10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504

其它文件與鏈接

Link to publication in Scopus

引用此

Hsuen, J. H., Lederer, M., Kerkhofs, L., Raffel, Y., Pirro, L., Chohan, T., Seidel, K., Kampfe, T., De, S., & Wu, T. L. (2023). Demonstration of Large Polarization in Si-doped HfO₂Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention. 於 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504

Hsuen, Jing Hua ; Lederer, Maximillian ; Kerkhofs, Lars 等. / Demonstration of Large Polarization in Si-doped HfO₂Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

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title = "Demonstration of Large Polarization in Si-doped HfO2Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention",

abstract = "This paper reports that large polarization (2 Pr 35.3 μ C cm2) can be demonstrated in Si-doped Hf02 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with proper annealing temperature. In addition, wake-up free characteristic as well as good retention for up to 104 seconds is observed for the devices used in the present study. It is also found that devices with different annealing temperatures lead to distinct leakage behavior, which adversely affected the cycle-to-breakdown reliability.",

author = "Hsuen, {Jing Hua} and Maximillian Lederer and Lars Kerkhofs and Yannick Raffel and Luca Pirro and Talha Chohan and Konrad Seidel and Thomas Kampfe and Sourav De and Wu, {Tian Li}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 ; Conference date: 17-04-2023 Through 20-04-2023",

year = "2023",

doi = "10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504",

language = "English",

series = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",

address = "美國",

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Hsuen, JH, Lederer, M, Kerkhofs, L, Raffel, Y, Pirro, L, Chohan, T, Seidel, K, Kampfe, T, De, S & Wu, TL 2023, Demonstration of Large Polarization in Si-doped HfO₂Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention. 於 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023, Hsinchu, 台灣, 17/04/23. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504

Demonstration of Large Polarization in Si-doped HfO₂Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention. / Hsuen, Jing Hua; Lederer, Maximillian; Kerkhofs, Lars 等.
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Demonstration of Large Polarization in Si-doped HfO2Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention

AU - Hsuen, Jing Hua

AU - Lederer, Maximillian

AU - Kerkhofs, Lars

AU - Raffel, Yannick

AU - Pirro, Luca

AU - Chohan, Talha

AU - Seidel, Konrad

AU - Kampfe, Thomas

AU - De, Sourav

AU - Wu, Tian Li

PY - 2023

Y1 - 2023

N2 - This paper reports that large polarization (2 Pr 35.3 μ C cm2) can be demonstrated in Si-doped Hf02 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with proper annealing temperature. In addition, wake-up free characteristic as well as good retention for up to 104 seconds is observed for the devices used in the present study. It is also found that devices with different annealing temperatures lead to distinct leakage behavior, which adversely affected the cycle-to-breakdown reliability.

AB - This paper reports that large polarization (2 Pr 35.3 μ C cm2) can be demonstrated in Si-doped Hf02 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with proper annealing temperature. In addition, wake-up free characteristic as well as good retention for up to 104 seconds is observed for the devices used in the present study. It is also found that devices with different annealing temperatures lead to distinct leakage behavior, which adversely affected the cycle-to-breakdown reliability.

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U2 - 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504

DO - 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504

M3 - Conference contribution

AN - SCOPUS:85162950223

T3 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

BT - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023

Y2 - 17 April 2023 through 20 April 2023

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Hsuen JH, Lederer M, Kerkhofs L, Raffel Y, Pirro L, Chohan T 等. Demonstration of Large Polarization in Si-doped HfO₂Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention. 於 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). doi: 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504