Demonstration of Large Polarization in Si-doped HfO2Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention

Jing Hua Hsuen, Maximillian Lederer*, Lars Kerkhofs, Yannick Raffel, Luca Pirro, Talha Chohan, Konrad Seidel, Thomas Kampfe, Sourav De, Tian Li Wu*

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

This paper reports that large polarization (2 Pr 35.3 μ C cm2) can be demonstrated in Si-doped Hf02 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with proper annealing temperature. In addition, wake-up free characteristic as well as good retention for up to 104 seconds is observed for the devices used in the present study. It is also found that devices with different annealing temperatures lead to distinct leakage behavior, which adversely affected the cycle-to-breakdown reliability.

原文English
主出版物標題2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350334166
DOIs
出版狀態Published - 2023
事件2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan
持續時間: 17 4月 202320 4月 2023

出版系列

名字2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
國家/地區Taiwan
城市Hsinchu
期間17/04/2320/04/23

指紋

深入研究「Demonstration of Large Polarization in Si-doped HfO2Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention」主題。共同形成了獨特的指紋。

引用此