Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O2 Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality

Yan Kui Liang, Jui Sheng Wu, Chih Yu Teng, Hua Lun Ko, Quang Ho Luc, Chun Jung Su, Edward Yi Chang, Chun-Hsiung Lin

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

In this letter, 5 nm-thick HZO ultra-thin ferroelectric capacitors with excellent remanent polarization (Pr) and reliability are presented. The TiN/HZO/TiN metal-ferroelectric-metal (MFM) capacitor stack was deposited consecutively in the same atomic layer deposition (ALD) system without breaking the vacuum (i.e. “in-situ” like) to improve the interface quality between TiN electrodes and HZO ferroelectric layer. The samples show high Pr of 20.5 μC/cm2 (i.e. 2Pr = 41 μC/cm2) under driving voltage of 3 V with low coercive voltage of approximately 0.6 V. The robustness of the MFM capacitor was presented by the outstanding endurance characteristics for keeping 2Pr value higher than 20 μC/cm2 after 1010 cycles at a high electric field of 5 MV/cm without breakdown, though the Pr values gradually degrade with cycles at low field (i.e. 2.4 MV/cm). The highly robust endurance characteristics of the 5nm-thick HZO MFM capacitor indicate the good interface quality achieved in this study.

原文American English
頁(從 - 到)1299 - 1302
頁數4
期刊Ieee Electron Device Letters
42
發行號9
DOIs
出版狀態Published - 9月 2021

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