Demonstration of High Voltage (>2KV) GaN-on-QST power MIS-HEMTs with the Stable Dynamic On-resistance up to 1650 V

Chia Wei Liu*, Yen Wei Liu, Hsin Jou Ho, Tian Li Wu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this work, GaN power Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) have been fabricated using GaN-on-QST substrate with only SiON dielectric (Device A) and GaN-on-Si substrate with in-situ SiN/SiON dielectric (Device B).

原文English
主出版物標題WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350337112
DOIs
出版狀態Published - 2023
事件2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan
持續時間: 27 8月 202329 8月 2023

出版系列

名字WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
國家/地區Taiwan
城市Hsinchu
期間27/08/2329/08/23

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