Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma Treatment

Tzu Heng Lin*, You Shiun Chou, Hung Chun Chen, Tian Li Wu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this work, the surface of the p-GaN gate is treated by the oxygen plasma in p-GaN HMETs to form the MgO, suggested by the XPS analysis. Due to formation of wide bandgap MgO layer, the gate leakage can be suppressed and gate breakdown can be enhanced. The p-GaN HEMTs treated by the oxygen plasma treatment exhibit more than 1000V breakdown voltage and robust forward gate TDDB capability.

原文English
主出版物標題WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350337112
DOIs
出版狀態Published - 2023
事件2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan
持續時間: 27 8月 202329 8月 2023

出版系列

名字WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
國家/地區Taiwan
城市Hsinchu
期間27/08/2329/08/23

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