Demonstration of High Interface Quality AlGaN/GaN MIS-HEMT with Fully Wet Recess and MOCVD Grown AlN Dielectric

Jui Sheng Wu*, Edward Yi Chang

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this study, the results indicate that a method combining fully-recessed wet etching and regrown channel by MOCVD is capable of obtaining high quality interface in GaN MIS-HEMT. A low Vth hysterisis GaN MIS-HEMT of 0.3V is demonstrated in this work. The GaN MIS-HEMT has a Vth of-1.5 V, a high Id,max of 771mA/mm and a RON of 13.5 Ω·mm. The wet etching shows good uniformity while the MOCVD grown AlN enhances the maximum drain current. The concept provides new insights to gate recess fabrication and MOCVD grown high quality dielectrics.

原文English
主出版物標題Nanomaterials and Nanotechnology for Sustainable Development - Selected peer-reviewed full text papers from the 2nd Nanotechnology Malaysia Biennial Symposium, NanoSym 2021
編輯Mohd Ambri Mohamed, Dilla Duryha Berhanuddin, Azrul Azlan Hamzah
發行者Trans Tech Publications Ltd.
頁面7-12
頁數6
ISBN(列印)9783035716757
DOIs
出版狀態Published - 2022
事件2nd Nanotechnology Malaysia Biennial Symposium, NanoSym 2021 - Virtual, Online
持續時間: 11 10月 202113 10月 2021

出版系列

名字Materials Science Forum
1055 MSF
ISSN(列印)0255-5476
ISSN(電子)1662-9752

Conference

Conference2nd Nanotechnology Malaysia Biennial Symposium, NanoSym 2021
城市Virtual, Online
期間11/10/2113/10/21

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