@inproceedings{81d2ba9dee554292852b151034426608,
title = "Demonstration of High Interface Quality AlGaN/GaN MIS-HEMT with Fully Wet Recess and MOCVD Grown AlN Dielectric",
abstract = "In this study, the results indicate that a method combining fully-recessed wet etching and regrown channel by MOCVD is capable of obtaining high quality interface in GaN MIS-HEMT. A low Vth hysterisis GaN MIS-HEMT of 0.3V is demonstrated in this work. The GaN MIS-HEMT has a Vth of-1.5 V, a high Id,max of 771mA/mm and a RON of 13.5 Ω·mm. The wet etching shows good uniformity while the MOCVD grown AlN enhances the maximum drain current. The concept provides new insights to gate recess fabrication and MOCVD grown high quality dielectrics.",
keywords = "AlGaN/GaN HEMT, MIS-HEMT, Wet recess",
author = "Wu, {Jui Sheng} and Chang, {Edward Yi}",
note = "Publisher Copyright: {\textcopyright} 2022 Trans Tech Publications Ltd, Switzerland.; null ; Conference date: 11-10-2021 Through 13-10-2021",
year = "2022",
doi = "10.4028/p-180hme",
language = "English",
isbn = "9783035716757",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "7--12",
editor = "Mohamed, {Mohd Ambri} and Berhanuddin, {Dilla Duryha} and Hamzah, {Azrul Azlan}",
booktitle = "Nanomaterials and Nanotechnology for Sustainable Development - Selected peer-reviewed full text papers from the 2nd Nanotechnology Malaysia Biennial Symposium, NanoSym 2021",
}