Demonstration of HfO2-Based Gate Stacks with Ultralow Interface State Density and Leakage Current on Ge pMOSFET by Adding Hafnium into GeOx Interfacial Layer

Hui Hsuan Li, Shang Chiun Chen, Yu Hsien Lin, Chao Hsin Chien*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this work, we investigated a continuous fabrication method for Hf-based gate stacks on a Ge bulk p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) with adding Hafnium atom into GeOx interfacial layer (IL) through in situ plasma-enhanced atomic layer deposition (PEALD). The results revealed that the accumulation capacitance exhibited no significant increase in the capacitance-voltage (CV) curves due to the decreased GeO volatilization. Simultaneously, through X-ray photoelectron spectroscopy (XPS), we observed that adding Hf into GeOx IL showed a higher GeO content than pure GeOx IL. Therefore, adding Hf into GeOx IL method could attain an ultralow interface trap density (Dit) of approximately 2 × 1011 eV-1 cm-2, a record low gate leakage current of 9 × 10-5 A/cm2 under PMA 500 °C. In addition, the Ge pMOSFET with adding Hf into GeOx IL at PMA 500 °C exhibited an effective peak hole mobility of 138 cm2/V•s owing to less coulomb scattering.

原文English
主出版物標題Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
編輯Fan Ye, Ting-Ao Tang
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665469067
DOIs
出版狀態Published - 2022
事件16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 - Nanjing, 中國
持續時間: 25 10月 202228 10月 2022

出版系列

名字Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

Conference

Conference16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
國家/地區中國
城市Nanjing
期間25/10/2228/10/22

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