@inproceedings{a8081cbe517348d788664d85ab67048c,
title = "Demonstration of HfO2-Based Gate Stacks with Ultralow Interface State Density and Leakage Current on Ge pMOSFET by Adding Hafnium into GeOx Interfacial Layer",
abstract = "In this work, we investigated a continuous fabrication method for Hf-based gate stacks on a Ge bulk p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) with adding Hafnium atom into GeOx interfacial layer (IL) through in situ plasma-enhanced atomic layer deposition (PEALD). The results revealed that the accumulation capacitance exhibited no significant increase in the capacitance-voltage (CV) curves due to the decreased GeO volatilization. Simultaneously, through X-ray photoelectron spectroscopy (XPS), we observed that adding Hf into GeOx IL showed a higher GeO content than pure GeOx IL. Therefore, adding Hf into GeOx IL method could attain an ultralow interface trap density (Dit) of approximately 2 × 1011 eV-1 cm-2, a record low gate leakage current of 9 × 10-5 A/cm2 under PMA 500 °C. In addition, the Ge pMOSFET with adding Hf into GeOx IL at PMA 500 °C exhibited an effective peak hole mobility of 138 cm2/V•s owing to less coulomb scattering.",
keywords = "Germanium, germanium oxide (GeO), hafnium (Hf), in situ, interfacial layer (IL), pMOSFET, plasma-enhanced atomic layer deposition (PEALD)",
author = "Li, {Hui Hsuan} and Chen, {Shang Chiun} and Lin, {Yu Hsien} and Chien, {Chao Hsin}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 ; Conference date: 25-10-2022 Through 28-10-2022",
year = "2022",
doi = "10.1109/ICSICT55466.2022.9963383",
language = "English",
series = "Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Fan Ye and Ting-Ao Tang",
booktitle = "Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022",
address = "美國",
}