@inproceedings{4b977a9470f84d6cb26e419ba6fa5345,
title = "Demonstration of a Millimeter-wave High-Power Transceiver Module using AlN Interposer",
abstract = "This paper presents a GaN-based transceiver module featuring a maximum equivalent isotropically radiated power (EIRP) of 30.3 dBm at 38 GHz. With the adoption of AlN substrate as interposer, an effective management of the heat generated during high power operation mode was achieved. Experimental verification with a 24-hour over-the-air (OTA) test was performed while driving the transceiver at its maximum EIRP. Such verification has demonstrated the great potential of adopting the developed AlN substrate technology as interposer for high-power transceivers at millimeter-wave frequencies.",
keywords = "Aluminum nitride (AlN), gallium nitride (GaN), heat dissipation, interposer, millimeter-wave, transceiver",
author = "Tsao, {Yi Fan} and Yuan Wang and Chiu, {Ping Hsun} and Arpan Desai and Mihaela Wolf and Serguei Chevtchenko and Joachim W{\"u}rfl and Hsu, {Heng Tung}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 31st Asia-Pacific Microwave Conference, APMC 2023 ; Conference date: 05-12-2023 Through 08-12-2023",
year = "2023",
doi = "10.1109/APMC57107.2023.10439669",
language = "English",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "61--63",
booktitle = "2023 Asia-Pacific Microwave Conference, APMC 2023",
address = "美國",
}