Demonstration of 64 Conductance States and Large Dynamic Range in Si-doped HfO2 FeFETs under Neuromorphic Computing Operations

Doped HfO2 Ferroelectric Field-Effect Transistors (FeFETs), which enable a low power operation, multilevel states tunability, and CMOS process compatibility , are promising candidates for neuro-inspired computing [1]. Currently, the 32 levels of conductance states under the neuromorphic computing in Zr-doped FeFETs and MOSCAPs have been successfully demonstrated [2]. In this work, Si-doped HfO2 FeFETs are fabricated and characterized, showing a promising neuromorphic functionalities with up to 64-states and large dynamic range Furthermore, two different pulsing schemes are used for extracting the device-level neuromorphic functionalities, suggesting that the programming pulses significantly influence the neuromorphic performance of the device.