Doped HfO2 Ferroelectric Field-Effect Transistors (FeFETs), which enable a low power operation, multilevel states tunability, and CMOS process compatibility , are promising candidates for neuro-inspired computing . Currently, the 32 levels of conductance states under the neuromorphic computing in Zr-doped FeFETs and MOSCAPs have been successfully demonstrated . In this work, Si-doped HfO2 FeFETs are fabricated and characterized, showing a promising neuromorphic functionalities with up to 64-states and large dynamic range Furthermore, two different pulsing schemes are used for extracting the device-level neuromorphic functionalities, suggesting that the programming pulses significantly influence the neuromorphic performance of the device.
|出版狀態||Published - 4月 2022|
|事件||2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan|
持續時間: 18 4月 2022 → 21 4月 2022
|Conference||2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022|
|期間||18/04/22 → 21/04/22|