Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS₂ Channel Directly Grown on SiO_x/Si Substrates Using Area-Selective CVD Technology

Yun Yan Chung, Jia Min Shieh, Sheng Kai Su, Hung Li Chiang, Tzu Chiang Chen, Lain Jong Li, H. S.Philip Wong, Wen-Bin Jian, Chao-Hsin Chien^*, Kuan Cheng Lu, Chao Ching Cheng, Ming Yang Li, Chao Ting Lin, Chi Feng Li, Jyun Hong Chen, Tung Yen Lai, Kai Shin Li