Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, S. NishizawaI. Omura, H. Ohashi, T. Hiramoto

研究成果: Conference contribution同行評審

8 引文 斯高帕斯(Scopus)

摘要

Functional trench-gated 1200V-10A class Si-IGBTs, designed based on a three dimensional (3D) scaling concept, were fabricated, and 5V gate voltage switching operation has been demonstrated for the first time. 33% reduction of turn-off loss and 100mV improvement of on-state voltage were achieved, while keeping 1.2kV forward blocking voltage.

原文English
主出版物標題2018 IEEE International Electron Devices Meeting, IEDM 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面8.4.1-8.4.4
ISBN(電子)9781728119878
DOIs
出版狀態Published - 16 一月 2019
事件64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
持續時間: 1 十二月 20185 十二月 2018

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2018-December
ISSN(列印)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
國家/地區United States
城市San Francisco
期間1/12/185/12/18

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