Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes

M. H. Lo*, P. M. Tu, C. H. Wang, Y. J. Cheng, C. W. Hung, S. C. Hsu, Hao-Chung Kuo, Hsiao-Wen Zan, S. C. Wang, C. Y. Chang, C. M. Liu

*此作品的通信作者

研究成果: Article同行評審

38 引文 斯高帕斯(Scopus)

摘要

A defect selective passivation method to block the propagation of threading dislocations in GaN epitaxial growth is demonstrated. The defect selective passivation is done by using defect selective chemical etching to locate defect sites, followed by silicon oxide passivation of the etched pits, and epitaxial over growth. The threading dislocation density in the regrown epilayer is significantly improved from 1 × 109 to 4 × 107 cm-2. The defect passivated epiwafer is used to grow light emitting diode and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.

原文English
文章編號211103
期刊Applied Physics Letters
95
發行號21
DOIs
出版狀態Published - 2009

指紋

深入研究「Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes」主題。共同形成了獨特的指紋。

引用此